Plasma Focused-Ion-Beam ”PFIB” FE-SEM   TESCAN has introduced the FERA-XMH, a high resolution Schottky Field Emission scanning electron microscope with a fully integrated plasma source Focused Ion Beam. The system has been developed in co-operation with the French company Orsay Physics. In addition to electron and ion columns, the FERA-XMH Plasma FIB-FE-SEM can be configured with gas injection systems, nano-manipulators, and a wide variety of detectors such as SE, BSE, SI, CL, EDX, EBSD etc.   The use of a Xenon plasma source for the focused ion beam allows the FERA FIB-SEM to satisfy high resolution FIB requirements (imaging, fine milling / polishing), as well as achieving high ion currents needed for ultra-fast material removal rates.   The resolution of the plasma ion beam is < 70 nm and the maximum Xe ion current is 2 µA. Compared to existing FIB technologies with gallium sources, the material removal rate achievable for silicon with the PFIB (Plasma FIB) is more than 30x faster. For this reason the FERA-XMH is well suited for applications requiring the removal of large volumes of material, particularly in the semiconductor packaging corridor where TSV technology is being utilized.   The FERA 3 FIB-SEM workstations integration of both an electron and focused ion beam places this tool in a class all its own, affording the end user the benefits of electron beam analysis and characterization. Generally, systems of this kind will be used for circuit edit, 3D metrology, defect analysis and failure analysis.   TESCAN will deliver the first system to the MiQro Innovation Collaborative Centre (C2MI) in Canada this year. The system will be used for the inspection of integrated circuit (IC) packaging.   TESCAN FERA Chamber Specifications XM GM Internal Diameter 300 x 340 mm (w,d) 340 x 315 mm (w,d) Door Width 285 x 320 mm (w,h) 340 x 320 mm (w,h) Type compucentric compucentric X 130 mm mot. 130 mm mot. Y 130 mm mot. 130 mm mot. Z 100 mm mot. 100 mm mot. Rotation 360° mot. 360° mot. Tilt -30 to +90° mot. -60 to +90° mot. Specimen Hight 139 mm max. 145 mm max. Ports 12+ 20+ TESCAN LYRA FE-FIB-SEM Specifications Chamber & Vacuum XMH / XMU / GMH / GMU Column SEM FIB Electron / Ion Gun High Brightness Schottky Emitter Xe Plasma Ion Source Resolution (SE) 1.2 nm at 30 kV < 70 nm at 30 kV Vacuum FIB Gun  — < 5*10-4 Pa High Vacuum Mode < 9*10-3 Pa  — Low Vacuum Mode (only in U-variant) 7-500 Pa  — Working Modes Resolution, Depth, Wide Field, Field, Channelling, 3D Beam - Live Stereoscopic Imaging, E-Beam Induced Deposition*, Lithography Imaging, SEM-FIB simultaneous imaging, Etching, Polishing, Selective etching*, I-Beam Induced Deposition* Magnification 2 to 1,000,000x 150 to 1,000,000x Accelerating Voltage 200 V to 30 kV 500 V to 30 kV Probe Current 2 pA to 200 nA 20 pA to 2 µA Requirements 230 V / 50 Hz or 120 V / 60 Hz, 2300 VA, No Water Cooling, Compressed Air 450 - 600 kPa, Compressed Nitrogen for Venting 150 - 500 kPa