TESCAN FERA GMPlasma Focused-Ion-Beam
”PFIB” FE-SEM

 
TESCAN has introduced the FERA-XMH, a high resolution Schottky Field Emission scanning electron microscope with a fully integrated plasma source Focused Ion Beam.

In addition to electron and ion columns, the FERA Plasma FIB-FE-SEM can be configured with gas injection systems, nano-manipulators, and a wide variety of detectors such as SE, BSE, SI, CL, EDX, EBSD etc.
 
click to enlargeThe use of a Xenon plasma source for the focused ion beam allows the FERA FIB-SEM to satisfy high resolution FIB requirements (imaging, fine milling / polishing), as well as achieving high ion currents needed for ultra-fast material removal rates.
 
The resolution of the plasma ion beam is 25 nm and the maximum Xe ion current is 2 A. Compared to existing FIB technologies with gallium sources, the material removal rate achievable for silicon with the PFIB (Plasma FIB) is more than 50x faster. For this reason the FERA is well suited for applications requiring the removal of large volumes of material, particularly in the semiconductor packaging corridor where TSV technology is being utilized.
 
The FERA FIB-SEM workstations integration of both an electron and focused ion beam places this tool in a class all its own, affording the end user the benefits of electron beam analysis and characterization. Generally, systems of this kind will be used for circuit edit, 3D metrology, defect analysis and failure analysis.
 

TESCAN FERA Chamber Specifications

XM

GM

Internal Diameter

300 x 340 mm (w,d)

340 x 315 mm (w,d)

Door Width

290 x 322 mm (w,h)

340 x 320 mm (w,h)

Type

compucentric

compucentric

X

130 mm mot.

130 mm mot.

Y

130 mm mot.

130 mm mot.

Z

100 mm mot.

100 mm mot.

Rotation

360 mot.

360 mot.

Tilt

-30 to +90 mot.

-60 to +90 mot.

Specimen Hight

141 mm max.

141 mm max.

Ports

12+

20+

TESCAN LYRA  FE-FIB-SEM Specifications

Chamber & Vacuum

XMH / XMU / GMH / GMU

Column

SEM

FIB

Electron / Ion Gun

High Brightness Schottky Emitter

Xe Plasma Ion Source

Resolution (SE)

1.2 nm at 30 kV

< 25 nm at 30 kV

Vacuum

FIB Gun

 —

< 5*10-4 Pa

High Vacuum Mode

< 9*10-3 Pa

 —

Low Vacuum Mode
(only in U-variant)

7-500 Pa

 —

Working Modes

Resolution, Depth, Wide Field, Field, Channelling, 3D Beam - Live Stereoscopic Imaging, E-Beam Induced Deposition*, Lithography

Imaging, SEM-FIB simultaneous imaging, Etching, Polishing, Selective etching*, I-Beam Induced Deposition*

Magnification

1 to 1,000,000x

150 to 1,000,000x

Accelerating Voltage

200 V to 30 kV

500 V to 30 kV

Probe Current

2 pA to 200 nA

1 pA to 2 A

Requirements

230 V / 50 Hz or 120 V / 60 Hz, 2300 VA, No Water Cooling, Compressed Air 600 - 800 kPa, Compressed Nitrogen for Venting 150 - 500 kPa

* only if GIS option installed
 
** Resolution for LYRA FE-SEM models with BDT (Beam Deceleration Technology) available on request.
 
Wide Field Optics™ and In-Flight Beam Tracing™ are trademarks of Tescan, a.s.
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