GIS Option Features Ideal geometrical configuration with respect to SEM and FIB columns 5 independent gas reservoirs with capillaries 3-axis microstage with automatic nozzles positioning Automated temperature control Standard gases for GIS (other gasses on request) Tungsten metal deposition Platinum metal deposition Insulator (SiOx) deposition Enhanced etching of diamond and PMMA (H2O) Enhanced or selective etching of Si, SiOx, Si3N4, W (XeF2) FIB 1 2 3 FIB + GIS 4 5 6 1) Milling (Etching): Sputtering a specimen atoms by “mechanical” action of the ions impinging on the surface (modification of the surface morphology) 2) Ion Implantation: Penetration of the ions into the surface layers of the specimen (modification of material chemical composition) 3) Ion Deposition: Very low energy ions deposition on the surface (creation of structures that are bound to the surface) 4) Enhanced Milling (Etching): Examples: XeF2 enhances Si, SiO2 and W etching by factor of 5 to 100 times; H2O of PMMA and diamond 10 to 20 times 5) Selective Milling (Etching): Combination of enhanced and reduced milling. Examples: H2O greatly reduces etching of Al, Si and SiO2; XeF2 of Al 6) Material Deposition: Adsorption of the precursor molecules on the surface, ion beam (or e-beam) induced dissociation of the gas molecules, deposition of the material atoms (e.g. Pt, W, C, SiOx)